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13003 X93255 MSC0943 ADT14GP 85559 99261 80000 JANTX1N
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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1025
DESCRIPTION *With TO-220 package *High DC current gain *DARLINGTON
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 200 200 7 8 12 0.5 1.0 50 150 -55~150 UNIT V V V A A A A W
THERMAL CHARACTERISTICS
SYMBOL R8j-C PARAMETER Thermal resistance junction to case VALUE 2.5 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.1A ; IB=0 IC=5A; IB=10mA IC=5A ;IB=10mA VCB=200V ;IE=0 VCE=200V; IB=0 VEB=7V; IC=0 IC=5A ; VCE=3V IC=0.8A ; VCE=10V 1500 MIN 200
2SD1025
SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE fT
TYP.
MAX
UNIT V
1.5 2.0 0.1 0.1 5.0 30000 20
V V mA mA mA
MHz
Switching times ton ts tf Turn-on time Storage time Fall time IC=5A IB1=- IB2=10mA RL=5C; VBB2=4V 2.0 8.0 5.0 s s s
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1025
Fig.2 Outline dimensions(unindicated tolerance:0.10 mm)
3


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